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PRODUCT NEWS
700 V PowerGaN shrinks the power stage in AI servers, robotics, and smartgrid
Faster PowerGaN switching downsizes the magnetics and passives that dominate converter size and BOM cost.
250 V MDmesh M9 MOSFET with wide SOA in D2PAK
Low-loss switching and a wide safe operating area for robust DC-DC conversion in 36-80 V bus systems.
Automotive-grade 40 V StripFET F8 MOSFET in a compact package
Lower on-resistance and improved thermal dissipation for automotive motor control and power distribution.
650 V half-bridge IGBT with top-side cooling for OBC designs
Combines IGBTs and freewheeling diodes in the ACEPACK SMIT package, with top-side cooling that keeps heat off the PCB.
1200 V automotive MDmesh K5 in high-creepage H2PAK-2
Enhanced creepage and clearance eliminate the need for coating or potting in high-voltage automotive BMS designs.
1200 V SCRs up to 130 A in TO247HC
High-temperature, high-creepage thyristors for robust industrial power control, rated up to130 A.
BOARD NEWS
Evaluate 700 V PowerGaN in buck, boost, PFC, and inverter topologies
The STEVAL-G0807LBCB half-bridge board characterizes the SGT080R70ILB 700 V GaN with tunable gate drive and TIM evaluation.
Available on request.
